Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 6, 2023
0Patent Application Number
172265990
Date Filed
April 9, 2021
0Patent Citations
Patent Citations Received
Patent Primary Examiner
A method of forming a semiconductor device includes: forming a fin structure protruding above a substrate, where the fin structure comprises a fin and a layer stack overlying the fin, where the layer stack comprises alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin structure; forming openings in the fin structure on opposing sides of the dummy gate structure, where the openings extend through the layer stack into the fin; forming a dielectric layer in bottom portions of the openings; and forming source/drain regions in the openings on the dielectric layer, where the source/drain regions are separated from the fin by the dielectric layer.
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