US Patent 11670678 Integrated circuit structure

An integrated circuit (IC) structure includes a first cell and a second cell abutting the first cell. The first cell includes a first fin-like field-effect transistor (FinFET). The first FinFET includes a first channel region in a first fin extending along a first direction, and a first gate electrode extending across the first channel region in the first fin along a second direction different from the first direction. The second FinFET includes a second channel region in a second fin aligned with the first fin along the first direction, and a second gate electrode extending across the second channel region in the second fin along the second direction. The second fin has a smaller width than the first fin.