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US Patent 11670681 Method of forming fully strained channels

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
March 19, 2021
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Date of Patent
June 6, 2023
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17207058
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Patent Citations
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US Patent 10535736 Fully strained channel
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US Patent 10535654 Cut metal gate with slanted sidewalls
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US Patent 8772109 Apparatus and method for forming semiconductor contacts
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US Patent 8785285 Semiconductor devices and methods of manufacture thereof
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11670681
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Patent Primary Examiner
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Brian Turner
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CPC Code
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H01L 29/66795
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H01L 27/0924
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H01L 29/78
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H01L 29/7851
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H01L 29/1083
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