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US Patent 11672191 Semiconductor devices comprising threshold switching materials

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Micron Technology
Micron Technology
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Date Filed
January 29, 2021
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Date of Patent
June 6, 2023
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Patent Applicant
Micron Technology
Micron Technology
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Patent Application Number
17162071
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Patent Citations
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US Patent 8723154 Integration of an amorphous silicon resistive switching device
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US Patent 9716225 Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
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US Patent 10193064 Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
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US Patent 10418487 Non-planar gate all-around device and method of fabrication thereof
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US Patent 10923657 Methods of forming memory cells and memory devices
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US Patent 10418554 Methods of forming memory cells and semiconductor devices
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US Patent 7446393 Co-sputter deposition of metal-doped chalcogenides
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US Patent 7485503 Dielectric interface for group III-V semiconductor device
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US Patent 7646630 Programmable matrix array with chalcogenide material
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US Patent 7709289 Memory elements having patterned electrodes and method of forming the same
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11672191
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Patent Primary Examiner
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Mark V. Prenty
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CPC Code
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H01L 45/1233
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H01L 45/1253
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