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US Patent 11674999 Wafer scale active thermal interposer for device testing

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Is a
Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
116749990
Date of Patent
June 13, 2023
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Patent Application Number
177251640
Date Filed
April 20, 2022
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Patent Citations
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US Patent 7726145 Temperature control unit for electronic component and handler apparatus
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US Patent 9080820 Heat dissipation switch
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US Patent 9291667 Adaptive thermal control
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US Patent 9307578 System and method for monitoring temperatures of and controlling multiplexed heater array
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US Patent 9310145 Heat flow device
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US Patent 9494353 Temperature control equipment
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US Patent 9594113 Package on package thermal forcing device
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US Patent 9766287 Thermal control
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...
Patent Citations Received
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US Patent 12085609 Thermal control wafer with integrated heating-sensing elements
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US Patent 12061227 Integrated heater and temperature measurement
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US Patent 12013432 Thermal control wafer with integrated heating-sensing elements
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US Patent 12000885 Multiplexed thermal control wafer and coldplate
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Patent Primary Examiner
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Neel D Shah
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CPC Code
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G01R 31/3185
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G01R 1/067
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G01R 1/073
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G01R 1/44
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G01R 31/28
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G01R 31/26
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G01R 31/20
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G01R 1/04
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A system for testing circuits of an integrated circuit semiconductor wafer includes a tester system for generating signals for input to the circuits and for processing output signals from the circuits for testing the wafer and a test stack coupled to the tester system. The test stack includes a wafer probe for contacting a first surface of the wafer and for probing individual circuits of the circuits of the wafer, a wafer thermal interposer (TI) layer operable to contact a second surface of the wafer and operable to selectively heat areas of the wafer, and a cold plate disposed under the wafer TI layer and operable to cool the wafer. The system further includes a thermal controller for selectively heating and maintaining temperatures of the areas of the wafer by controlling cooling of the cold plate and by controlling selective heating of the wafer TI layer.

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