US Patent 11677039 Vertical silicon and III-V photovoltaics integration with silicon electronics

A photovoltaic structure includes a substrate; and a plurality of off-axis, doped silicon regions outward of the substrate. The plurality of off-axis, doped silicon regions have an off-axis lattice orientation at a predetermined non-zero angle. A plurality of photovoltaic devices of a first chemistry are located outward of the plurality of off-axis, doped silicon regions. Optionally, a plurality of photovoltaic devices of a second chemistry, different than the first chemistry, are located outward of the substrate and are spaced away from the plurality of off-axis, doped silicon regions.