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Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 13, 2023
0Patent Application Number
171781880
Date Filed
February 17, 2021
0Patent Citations Received
Patent Primary Examiner
A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
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