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US Patent 11682466 One-time programmable memory read-write circuit
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Patent
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Current Assignee
ChangXin Memory Technologies
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Date Filed
May 29, 2020
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Date of Patent
June 20, 2023
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Patent Applicant
ChangXin Memory Technologies
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Patent Application Number
17429601
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Patent Citations
US Patent 7321518 Apparatus and methods for providing redundancy in integrated circuits
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US Patent 8173987 Integrated circuit 3D phase change memory array and manufacturing method
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US Patent 8254178 Self-timed integrating differential current
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11682466
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Patent Primary Examiner
Michael T. Tran
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CPC Code
G11C 7/1096
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G11C 17/04
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G11C 17/18
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G11C 29/027
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G11C 7/22
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G11C 17/16
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G11C 7/1069
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G11C 17/165
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