US Patent 11682591 Method for forming transistor structures
All edits
Edits on 21 Jun, 2023
Golden AI
Edits made to:
Infobox (+17 properties)
Article (+256 characters)
US Patent 11682591 Method for forming transistor structures
Article
According to an aspect of the present inventive concept there is provided a method for forming a first and a second transistor structure, wherein the first and second transistor structures are spaced apart by an insulating wall, and the method comprising:
Infobox
Is a
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
116825910
Date of Patent
June 20, 2023
0Patent Application Number
174099640
Date Filed
August 24, 2021
0Patent Citations
Patent Primary Examiner
Find more entities like US Patent 11682591 Method for forming transistor structures
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
