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US Patent 11682669 Metal gate structure and methods thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
September 3, 2021
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Date of Patent
June 20, 2023
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Patent Application Number
17446900
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Patent Citations
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US Patent 8785285 Semiconductor devices and methods of manufacture thereof
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9508719 Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9627379 FinFET devices and methods of forming the same
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US Patent 9842778 Method of fabricating FinFET structure
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US Patent 10283503 Metal gate structure and methods thereof
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US Patent 9887136 Semiconductor devices, FinFET devices, and methods of forming the same
0
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US Patent 10748898 Metal gate structure and methods thereof
0
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11682669
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Patent Primary Examiner
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Christine A Enad
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CPC Code
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H01L 21/31111
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H01L 21/32135
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H01L 21/32139
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H01L 21/823431
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H01L 21/823437
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H01L 29/0649
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H01L 29/42376
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H01L 29/4975
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H01L 29/517
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H01L 29/66545
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•••

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