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US Patent 11688445 Valley spin hall effect based non-volatile memory

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Purdue Research Foundation
Purdue Research Foundation
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Date Filed
January 30, 2022
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Date of Patent
June 27, 2023
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Patent Applicant
Purdue Research Foundation
Purdue Research Foundation
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Patent Application Number
17588317
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Patent Citations
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US Patent 10333058 Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
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US Patent 10333523 Exclusive-OR logic device with spin orbit torque effect
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US Patent 10608169 Magnetic tunnel junction device with spin-filter structure
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US Patent 10734052 Buffered spin-torque sensing device for global interconnect circuits
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US Patent 10790002 Giant spin hall-based compact neuromorphic cell optimized for differential read inference
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US Patent 10886460 Magnetic tunnel junction device with spin-filter structure
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US Patent 10923648 Memory cell, memory array, method of forming and operating memory cell
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US Patent 11250896 Valley spin hall effect based non-volatile memory
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US Patent 11289143 SOT-MRAM with shared selector
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US Patent 11276447 Spin current magnetoresistance effect element and magnetic memory
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11688445
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Patent Primary Examiner
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Leon Viet Q Nguyen
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CPC Code
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G11C 11/1675
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G11C 11/18
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G11C 11/161
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H01L 43/04
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H01L 43/065
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H01L 27/222
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G11C 11/1673
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