Patent attributes
According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a first metal portion, a third semiconductor region of a second conductivity type, a first electrode, a fourth semiconductor region of the second conductivity type, and a second electrode. The first semiconductor region includes a first portion and a second portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on part of the second semiconductor region. The first metal portion is provided in the first semiconductor region. The third semiconductor region is positioned on the first portion. The fourth semiconductor region is provided on another part of the second semiconductor region. The fourth semiconductor region is separated from the third semiconductor region. The fourth semiconductor region is positioned on the second portion.