US Patent 11695093 Superlattice photodetector/light emitting diode
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US Patent 11695093 Superlattice photodetector/light emitting diode
Article
A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
116950930
Date of Patent
July 4, 2023
0Patent Application Number
166795490
Date Filed
November 11, 2019
0Patent Citations
Patent Primary Examiner
CPC Code
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