US Patent 11696452 Multi-level memristor elements
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US Patent 11696452 Multi-level memristor elements
Article
There is described a two-terminal multi-level memristor element synthesised from binary memristors, which is configured to implement a variable resistance based on unary or binary code words. There is further described a circuit such as a synapse circuit implemented using a multi-level memristor element.
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
116964520
Date of Patent
July 4, 2023
0Patent Application Number
173086950
Date Filed
May 5, 2021
0Patent Citations
Patent Primary Examiner
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