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US Patent 11696510 Diffusion layer for magnetic tunnel junctions

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
May 28, 2021
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Date of Patent
July 4, 2023
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Patent Application Number
17334536
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Patent Citations
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US Patent 10468587 Semiconductor structure, electrode structure and method of forming the same
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US Patent 10032828 Semiconductor memory device and method for fabricating the same
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US Patent 10164169 Memory device having a single bottom electrode layer
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US Patent 8405172 Semiconductor device and semiconductor device assembly
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US Patent 9269612 Mechanisms of forming damascene interconnect structures
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11696510
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Patent Primary Examiner
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Cheung Lee
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CPC Code
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H01L 21/76805
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H01L 21/76841
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H01L 21/76843
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H01L 21/76849
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H01L 21/7685
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H01L 21/76877
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H01L 27/20
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H01L 27/22
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H01L 27/222
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H01L 27/228
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