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US Patent 11699475 Ferroelectric memory plate power reduction

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Micron Technology
Micron Technology
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Date Filed
April 21, 2021
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Date of Patent
July 11, 2023
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Patent Applicant
Micron Technology
Micron Technology
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Patent Application Number
17236724
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Patent Citations
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US Patent 9786347 Cell-specific reference generation and sensing
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US Patent 9786348 Dynamic adjustment of memory cell digit line capacitance
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US Patent 9786349 Cell performance recovery using cycling techniques
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US Patent 9799388 Charge sharing between memory cell plates using a conductive path
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US Patent 10049713 Full bias sensing in a memory array
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US Patent 10074422 2T1C ferro-electric random access memory cell
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US Patent 10153020 Dual mode ferroelectric memory cell operation
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US Patent 10163480 Periphery fill and localized capacitance
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US Patent 10360966 Half density ferroelectric memory and operation
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US Patent 10395717 Full bias sensing in a memory array
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11699475
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Patent Primary Examiner
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Leon Viet Q Nguyen
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