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US Patent 11699656 Tank circuit structure and method of making the same

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Patent
Patent
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Patent attributes

Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
116996560
Date of Patent
July 11, 2023
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Patent Application Number
173655930
Date Filed
July 1, 2021
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Patent Citations
‌
US Patent 7646440 Pixel structure of LCD and fabrication method thereof
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US Patent 7266867 Method for laminating electro-mechanical structures
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US Patent 7602264 Filter device, multiband filter, duplexer and communications equipment using the filter device
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US Patent 8243030 Touch panel and display device using the same
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Patent Primary Examiner
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Antonio B Crite
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CPC Code
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H01L 23/5227
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H01L 2225/06537
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H01L 23/5225
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H01L 25/0657
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H01L 21/8221
0
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H01L 23/5226
0

A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first inductor, a second inductor and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first gate layer. The first inductor is over the first shielding layer. The second inductor is below the first substrate. The first IMD layer is between the first substrate and the first shielding layer.

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