US Patent 11699752 Laterally diffused MOSFET and method of fabricating the same

A semiconductor device includes a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type, a source region and a body contact region in the second semiconductor region. The semiconductor device also includes a channel region, in the second semiconductor region, located laterally between the source region and the first semiconductor region, a gate dielectric layer overlying both the channel region and a portion of the first semiconductor region, and a gate electrode overlying the gate dielectric layer. The semiconductor device further includes a conformal conductive layer covering an upper surface of the body contact region and a side surface of the source region.