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US Patent 11710662 Reusable wide bandgap semiconductor substrate
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Patent
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Current Assignee
United Silicon Carbide, Inc.
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Date Filed
September 23, 2020
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Date of Patent
July 25, 2023
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Patent Applicant
United Silicon Carbide, Inc.
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Patent Application Number
17029699
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Patent Citations
US Patent 9868177 Wafer producing method
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US Patent 8962468 Formation of ohmic contacts on wide band gap semiconductors
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US Patent 9620415 Wafer processing method
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US Patent 9878397 SiC wafer producing method
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11710662
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Patent Primary Examiner
Fernando L Toledo
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CPC Code
H01L 21/28
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H01L 21/04
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H01L 21/304
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