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US Patent 11711987 Memory electrodes and formation thereof
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Patent
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Current Assignee
Micron Technology
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Date Filed
August 31, 2020
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Date of Patent
July 25, 2023
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Patent Applicant
Micron Technology
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Patent Application Number
17007156
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Patent Citations
US Patent 10541364 Memory cells with asymmetrical electrode interfaces
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US Patent 9257431 Memory cell with independently-sized electrode
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US Patent 10923657 Methods of forming memory cells and memory devices
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11711987
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Patent Primary Examiner
Mark V. Prenty
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CPC Code
H01L 45/1273
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H01L 45/16
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