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US Patent 11715794 VTFET with cell height constraints

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Date of Patent

August 1, 2023

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Patent Application Number

174649540

Date Filed

September 2, 2021

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Patent Citations

US Patent 9799777 Floating gate memory in a channel last vertical FET flow

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US Patent 11189725 VTFET with cell height constraints

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US Patent 9773708 Devices and methods of forming VFET with self-aligned replacement metal gates aligned to top spacer post top source drain EPI

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US Patent 10243073 Vertical channel field-effect transistor (FET) process compatible long channel transistors

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Patent Primary Examiner

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CPC Code

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Semiconductor devices include a channel fin having a top surface. A top semiconductor structure, in contact with the entire top surface of the channel fin and having a top portion and a bottom portion, with the top portion of the top semiconductor structure being narrower than the bottom portion. A restraint structure being formed over the bottom portion of the semiconductor structure.

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