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US Patent 11749678 Semiconductor device
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Patent
Date Filed
June 21, 2022
Date of Patent
September 5, 2023
Patent Application Number
17844807
Patent Citations
US Patent 9799765 Formation of a bottom source-drain for vertical field-effect transistors
US Patent 9966456 Methods of forming gate electrodes on a vertical transistor device
US Patent 10424515 Vertical FET devices with multiple channel lengths
US Patent 10504794 Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor
US Patent 10535652 Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction
US Patent 10541272 Steep-switch vertical field effect transistor
US Patent 10553682 Vertical transistors with multiple gate lengths
US Patent 10916638 Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance
US Patent 10600885 Vertical fin field effect transistor devices with self-aligned source and drain junctions
US Patent 11271107 Reduction of bottom epitaxy parasitics for vertical transport field effect transistors
•••
Patent Inventor Names
Youngchai Jung
Yeonho Park
Mingyu Kim
Munhyeon Kim
Seon-Bae Kim
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11749678
Patent Primary Examiner
Theresa T Doan
CPC Code
H01L 27/092
H01L 29/42376
H01L 29/66666
H01L 21/7682
H01L 21/823807
H01L 21/823871
H01L 21/823885
H01L 21/823864
H01L 29/4991
H01L 29/7827
•••
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