US Patent 11749729 Semiconductor device, integrated circuit component and manufacturing methods thereof

A semiconductor device includes a gate structure, source/drain (S/D) elements, a first metallization contact and a second metallization contact. The S/D elements are respectively located at two different sides of the gate structure. The first metallization contact is located at and in contact with a first side of each of the S/D elements. The second metallization contact is located at and in contact with a second side of each of the S/D elements, where the semiconductor device is configured to receive a power signal through the second metallization contact. The first side is opposite to the second side along a stacking direction of the gate structure and the S/D elements, and the first side is closer to the gate structure than the second side is.