Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Alexander Reznicek
Choonghyun Lee
Pouya Hashemi
Jingyun Zhang
Takashi Ando
Date of Patent
September 12, 2023
Patent Application Number
15959062
Date Filed
April 20, 2018
Patent Citations
...
Patent Primary Examiner
A semiconductor device includes a substrate material with a semiconductor material with a predetermined crystal orientation, a gate stack having a plurality of nanosheet channel layers, each nanosheet channel layer being controlled by metal gate layers located above and below the nanosheet channel layer, each nanosheet channel layer having the same semiconductor material and crystal orientation as that of the substrate, and a source/drain region on opposite sides of the gate stack. Each source/drain region includes bridging structures respectively connected to each nanosheet channel layer.
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