US Patent 11758728 Semiconductor device and method of manufacturing the same

In one embodiment, a semiconductor device includes a stacked film alternately including a plurality of electrode layers and a plurality of insulating layers, a charge storage layer provided on a side face of the stacked film via a first insulator, and a semiconductor layer provided on a side face of the charge storage layer via a second insulator. The device further includes a third insulator provided between an electrode layer and an insulating layer in the stacked film and between the electrode layer and the first insulator, and a first film provided between the third insulator and the insulating layer and/or between the third insulator and the first insulator, and including carbon, germanium, tin, aluminum, phosphorus or arsenic.