Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hanjin Lim
Sunmin Moon
Young-Lim Park
Kyuho Cho
Date of Patent
September 19, 2023
Patent Application Number
17720198
Date Filed
April 13, 2022
Patent Citations
Patent Primary Examiner
Patent abstract
Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.