Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shang-Ying Tsai
Ming-De Chen
Ming-Hsien Tsai
Jheng-Yuan Wang
Shih-Ming Yang
Fu-Lung Hsueh
Date of Patent
September 19, 2023
Patent Application Number
17571299
Date Filed
January 7, 2022
Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.
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