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US Patent 11769726 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
May 13, 2022
Date of Patent
September 26, 2023
Patent Application Number
17744375
Patent Citations
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US Patent 9947589 Methods of forming a gate contact for a transistor above an active region and the resulting device
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US Patent 10923489 Three-dimensional semiconductor devices including vertical structures
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US Patent 10553598 Three-dimensional semiconductor devices including vertical structures
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US Patent 11362032 Semiconductor device
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US Patent 9595582 Layouts and vertical structures of MOSFET devices
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US Patent 9865544 Semiconductor device layout having a power rail
Patent Inventor Names
Changbeom Kim
Byounggon Kang
Dalhee Lee
Eun-Hee Choi
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11769726
Patent Primary Examiner
‌
Laura M Menz
CPC Code
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H01L 27/0207
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H01L 23/5226
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H01L 23/528

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