Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Feng-Ming Huang
Feng-Yi Chang
Shih-Fang Tzou
Chien-Cheng Tsai
Fu-Che Lee
Date of Patent
September 26, 2023
Patent Application Number
17467287
Date Filed
September 6, 2021
Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.
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