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US Patent 11769817 Method for forming source/drain contacts

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
May 11, 2020
Date of Patent
September 26, 2023
Patent Application Number
16871882
Patent Citations
‌
US Patent 8823065 Contact structure of semiconductor device
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US Patent 8860148 Structure and method for FinFET integrated with capacitor
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
‌
US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
‌
US Patent 9520482 Method of cutting metal gate
‌
US Patent 8772109 Apparatus and method for forming semiconductor contacts
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US Patent 8785285 Semiconductor devices and methods of manufacture thereof
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
•••
Patent Inventor Names
Shahaji B. More
Cheng-Yi Peng
Shih-Chieh Chang
Kuo-Feng Yu
Chun Hsiung Tsai
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11769817
Patent Primary Examiner
‌
Chuong A Luu
CPC Code
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H01L 21/311
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H01L 21/3105
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H01L 21/26513
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H01L 21/8234
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H01L 21/324
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H01L 21/768
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H01L 21/28518
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H01L 21/31111
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H01L 21/76897
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H01L 21/76802
•••

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