Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming-Ching Chang
Shih-Yao Lin
Chao-Cheng Chen
Kuei-Yu Kao
Chen-Ping Chen
Chih-Han Lin
Date of Patent
September 26, 2023
Patent Application Number
17101291
Date Filed
November 23, 2020
Patent Citations
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Patent Primary Examiner
Patent abstract
A device includes a fin protruding from a semiconductor substrate; a gate stack over and along a sidewall of the fin; a gate spacer along a sidewall of the gate stack and along the sidewall of the fin; an epitaxial source/drain region in the fin and adjacent the gate spacer; and a corner spacer between the gate stack and the gate spacer, wherein the corner spacer extends along the sidewall of the fin, wherein a first region between the gate stack and the sidewall of the fin is free of the corner spacer, wherein a second region between the gate stack and the gate spacer is free of the corner spacer.
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