US Patent 11769839 Stacked III-V semiconductor diode

A stacked III-V semiconductor diode comprising or consisting of GaAs with a highly n-doped cathode layer, a highly p-doped anode layer and a drift region arranged between the cathode layer and the anode layer, wherein the drift region has a low n-doped drift layer and a low p-doped drift layer, the n-doped drift layer is arranged between the p-doped drift layer and the cathode layer, both drift layers each have a layer thickness of at least 5 μm and, along the respective layer thickness, have a dopant concentration maximum of not more than 8·10