Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hung-Hao Chen
Che-Cheng Chang
Horng-Huei Tseng
Wen-Tung Chen
Yu-Cheng Liu
Date of Patent
October 3, 2023
Patent Application Number
17646763
Date Filed
January 3, 2022
Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor device and method of manufacture are provided in which a passivation layer is patterned. In embodiments, by-products from the patterning process are removed using the same etching chamber and at the same time as the removal of a photoresist utilized in the patterning process. Such processes may be used during the manufacturing of FinFET devices.
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