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US Patent 11777005 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
May 19, 2021
Date of Patent
October 3, 2023
Patent Application Number
17324386
Patent Citations
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US Patent 9165940 Three dimensional NAND device with silicide containing floating gates and method of making thereof
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US Patent 9484358 Ultrahigh density vertical NAND memory device and method of making thereof
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US Patent 9780182 Molybdenum-containing conductive layers for control gate electrodes in a memory structure
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US Patent 9831268 Ultrahigh density vertical NAND memory device and method of making thereof
‌
US Patent 9984963 Cobalt-containing conductive layers for control gate electrodes in a memory structure
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US Patent 10128261 Cobalt-containing conductive layers for control gate electrodes in a memory structure
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US Patent 10741572 Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same
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US Patent 7105868 High-electron mobility transistor with zinc oxide
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US Patent 7211825 Indium oxide-based thin film transistors and circuits
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US Patent 7282782 Combined binary oxide semiconductor device
•••
Patent Inventor Names
Shinpei Matsuda
Shunpei Yamazaki
Akio Suzuki
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11777005
Patent Primary Examiner
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Michelle Mandala

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