Patent attributes
In a gate electrode of a nonvolatile memory device of an embodiment, a tunnel insulating film covers a channel region. A first current collector file is disposed on the side opposite to the channel region with respect to the tunnel insulating film. An ion conductor film is disposed between the tunnel insulating film and the first current collector film. A first electrode film is disposed between the tunnel insulating film and the ion conductor film. The first electrode film is in contact with the ion conductor film. A second electrode film is disposed between the ion conductor film and the first current collector film. The second electrode film is in contact with the ion conductor film. A second current collector film is disposed between the tunnel insulating film and the second electrode film.
