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US Patent 11778921 Double magnetic tunnel junction device

Overview Structured Data Issues Contributors Activity

Is a

Date Filed

December 21, 2020

Date of Patent

October 3, 2023

Patent Application Number

17128330

Patent Citations

US Patent 9564577 MRAM device and fabrication method

US Patent 9028910 MTJ manufacturing method utilizing in-situ annealing and etch back

US Patent 10153427 Magnetic tunnel junction (MTJ) performance by introducing oxidants to methanol with or without noble gas during MTJ etch

US Patent 7948044 Low switching current MTJ element for ultra-high STT-RAM and a method for making the same

US Patent 8796042 Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same

Patent Inventor Names

Pouya Hashemi

Jonathan Zanhong Sun

Bruce B. Doris

Chandrasekharan Kothandaraman

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

William C Trapanese

CPC Code

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