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US Patent 11783853 Topological insulator based spin torque oscillator reader

Patent 11783853 was granted and assigned to Western Digital on October, 2023 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent attributes

Patent Applicant

Western Digital

Current Assignee

Western Digital

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Inventor Names

Zhanjie Li

Cherngye Hwang

Brian R. York

Xiaoyong Liu

Quang Le

Kuok San Ho

Hisashi Takano

Date of Patent

October 10, 2023

Patent Application Number

17828226

Date Filed

May 31, 2022

Patent Citations

US Patent 7881018 Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise

US Patent 7242556 CPP differential GMR sensor having antiparallel stabilized free layers for perpendicular recording

US Patent 7298595 Differential GMR sensor with multi-layer bias structure between free layers of first and second self-pinned GMR sensors

US Patent 7436632 Differential/dual CPP recording head

US Patent 7643255 Anti-parallel magnetization layers in the free layers and magnetization layers of a differential sensor read head

US Patent 7697242 Method for providing a self-pinned differential GMR sensor having a bias structure comprising layers of ferromagnetic and non-magnetic material selected to provide a net-zero magnetic moment

US Patent 10127933 Multi-track reader for improved signal to noise ratio

US Patent 10210888 Dual spin-orbit torque oscillator in magnetic recording

...

Patent Citations Received

US Patent 12106787 DFL read head with SiOx cap layer on AlOx refill layers

0

US Patent 12131759 Two-dimensional magnetic recording read head with TaOx layer for flat middle shield topography and method of forming thereof

0

Patent Primary Examiner

Craig A. Renner

Patent abstract

The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.

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