‌

US Patent 11784196 Trenchless single-photon avalanche diodes

Patent 11784196 was granted and assigned to GlobalFoundries on October, 2023 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors

Is a

Patent attributes

Patent Applicant

GlobalFoundries

Current Assignee

GlobalFoundries

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Inventor Names

Kiok Boone Elgin Quek

Ping Zheng

Jing Hua Michelle Tng

Kien Seen Daniel Chong

Eng Huat Toh

Date of Patent

October 10, 2023

Patent Application Number

17307323

Date Filed

May 4, 2021

Patent Citations

US Patent 10672807 Photo detectors

US Patent 8093624 High fill-factor avalanche photodiode

US Patent 9105789 Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process

US Patent 10276625 CMOS image sensor including superlattice to enhance infrared light absorption

US Patent 10658419 Stacked backside illuminated SPAD array

US Patent 10672818 Sensor chip and electronic device

Patent Primary Examiner

Patent abstract

Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.

Timeline

No Timeline data yet.

Further Resources

Title

Author

Link

Type

Date

No Further Resources data yet.

References

Find more entities like US Patent 11784196 Trenchless single-photon avalanche diodes

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Golden Query Tool