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US Patent 11785761 Semiconductor memory devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
April 26, 2021
Date of Patent
October 10, 2023
Patent Application Number
17240486
Patent Citations
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US Patent 7947553 Method for fabricating semiconductor device with recess gate
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US Patent 8053315 Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer
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US Patent 8120099 Semiconductor device with buried gate and method for fabricating the same
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US Patent 8975140 Semiconductor device having passing gate and method for fabricating the same
‌
US Patent 9136135 Method of fabricating semiconductor device
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US Patent 9391206 Methods of forming transistors
‌
US Patent 9570404 Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
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US Patent 9530883 Insulated gate semiconductor device having a shield electrode structure and method
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US Patent 9673276 Semiconductor device and method of fabricating the same
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US Patent 7902597 Transistors with laterally extended active regions and methods of fabricating same
•••
Patent Inventor Names
Junsoo Kim
Wonsok Lee
Min Hee Cho
Satoru Yamada
Yoosang Hwang
Hui-Jung Kim
Bong-Soo Kim
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11785761
Patent Primary Examiner
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Bo Fan
CPC Code
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H01L 27/10876
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H01L 27/10823
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H01L 29/4966
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H01L 27/10891
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H01L 21/28088

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