Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jiunn-Hsiung Liao
Yu-Tsung Lai
Tai-Cheng Hou
Chih-Wei Kuo
Date of Patent
October 10, 2023
Patent Application Number
17336295
Date Filed
June 1, 2021
Patent Citations
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a passivation layer on the first MTJ and the second MTJ; removing part of the passivation layer so that a top surface of all of the remaining passivation layer is lower than a top surface of the first electrode; and forming a ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ.
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