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US Patent 11791213 Integrated circuit in hybrid row height structure
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Patent
Date Filed
June 2, 2022
Date of Patent
October 17, 2023
Patent Application Number
17831110
Patent Citations
US Patent 11011545 Semiconductor device including standard cells
US Patent 9793174 FinFET device on silicon-on-insulator and method of forming the same
US Patent 9263257 Semiconductor device having fin-shaped structure and method for fabricating the same
Patent Inventor Names
Jerry Chang-Jui Kao
Jung-Chan Yang
Hui-Zhong Zhuang
Tzu-Ying Lin
Yung-Chen Chien
Li-Chung Hsu
Sung-Yen Yeh
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11791213
Patent Primary Examiner
Duy T Nguyen
CPC Code
H01L 27/088
G06F 30/392
G06F 30/394
G06F 2115/06
H01L 27/0886
H01L 27/092
H01L 27/0207
H01L 23/528
H01L 23/535
H01L 23/50
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