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US Patent 11791377 Power device integration on a common substrate
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Patent
Date Filed
March 17, 2022
Date of Patent
October 17, 2023
Patent Application Number
17655336
Patent Citations
US Patent 9412911 Optical tuning of light emitting semiconductor junctions
US Patent 8994115 Power device integration on a common substrate
US Patent 9412881 Power device integration on a common substrate
US Patent 7235845 Power LDMOS transistor
US Patent 7273771 Common MOSFET process for plural devices
US Patent 7282765 Power LDMOS transistor
US Patent 7420247 Power LDMOS transistor
US Patent 7446375 Quasi-vertical LDMOS device having closed cell layout
US Patent 7560808 Chip scale power LDMOS device
US Patent 7576388 Trench-gate LDMOS structures
•••
Patent Inventor Names
Boyi Yang
Jacek Korec
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11791377
Patent Primary Examiner
Matthew C Landau
CPC Code
H01L 29/7821
H01L 29/0626
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