Patent attributes
An amplified spontaneous emission, ASE, source device combining a superluminescent light emitting diode, SLED, with a semiconductor optical amplifier, SOA, the SLED and SOA being arranged in series so that the SLED acts as a seed and the SOA acts as a broadband amplifier for the SLED output. Both SLED and SOA have a structure made up of a succession of epitaxial semiconductor layers which form a waveguide comprising a core of active region layers and surrounding cladding layers. The SLED and SOA confinement factors of the SLED and SOA, wherein confinement factor is the percentage of the optical mode power in the active region layers, is designed so that the SLED confinement factor is greater than that of the SOA by at least 20%. This allow higher power outputs, because the SLED power limits imposed by the onset of non-linear effects and catastrophic optical damage can be circumvented.
