Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Maxim S. Shatalov
Michael Shur
Alexander Dobrinsky
Mikhail Gaevski
Date of Patent
October 17, 2023
Patent Application Number
17198491
Date Filed
March 11, 2021
Patent Citations
Patent Primary Examiner
Patent abstract
A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
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