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US Patent 11804490 Method for fabricating semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
November 23, 2021
Date of Patent
October 31, 2023
Patent Application Number
17533212
Patent Citations
‌
US Patent 9559009 Gate structure cut after formation of epitaxial active regions
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US Patent 9773879 Semiconductor device and a method for fabricating the same
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US Patent 9780178 Methods of forming a gate contact above an active region of a semiconductor device
‌
US Patent 10832943 Gate contact over active region with self-aligned source/drain contact
‌
US Patent 9806166 Semiconductor devices and methods of fabricating the same
‌
US Patent 11195833 Semiconductor device and method for fabricating the same
‌
US Patent 9117886 Method for fabricating a semiconductor device by forming and removing a dummy gate structure
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US Patent 9553090 Structure and formation method of semiconductor device structure
Patent Inventor Names
Sung Il Park
Yun Il Lee
Eun Sil Park
Jae Hyun Park
Hyung Suk Lee
Joong Gun Oh
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11804490
Patent Primary Examiner
‌
Kenneth Parker
CPC Code
‌
H01L 29/0847
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H01L 29/42356
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H01L 29/66545
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H01L 29/6656
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H01L 29/66795
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H01L 29/7851
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H01L 29/0642
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H01L 21/823878
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H01L 21/823871
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H01L 21/823821
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