US Patent 11804527 Transistor with center fed gate
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US Patent 11804527 Transistor with center fed gate
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Patent abstract
A transistor includes a source contact connected to a Through-Silicon Via (TSV). A drain contact is connected to a first pad. A gate structure is interposed between the source contact and the drain contact. A second pad is connected to the gate structure, the second pad comprising a first side diametrically opposed to a second side, and a third side interposed therebetween, the source contact proximal to the third side, a first portion of the first side and a second portion of the second side.
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Patent Inventor Names
Bruce McRae Green
Daniel Joseph Lamey
Humayun Kabir
Ibrahim Khalil
Kevin Kim
Vikas Shilimkar
Date of Patent
October 31, 2023
Patent Application Number
17376026
Date Filed
July 14, 2021
Patent Citations
Patent Primary Examiner
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