US Patent 11804536 Thin film structure and semiconductor device including the same

A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.