Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jiun-Lei Jerry Yu
Chen-Ju Yu
Fu-Chih Yang
Chun Lin Tsai
Chun-Wei Hsu
Fu-Wei Yao
Date of Patent
October 31, 2023
Patent Application Number
17303331
Date Filed
May 26, 2021
Patent Citations
...
Patent Primary Examiner
Patent abstract
A method of forming a high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.
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