US Patent 11804542 Annular bipolar transistors
Patent 11804542 was granted and assigned to GlobalFoundries on October, 2023 by the United States Patent and Trademark Office.
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US Patent 11804542 Annular bipolar transistors
Article
Patent abstract
The present disclosure relates to semiconductor structures and, more particularly, to annular bipolar transistors and methods of manufacture. The structure includes: a substate material; a collector region parallel to and above the substrate material; an intrinsic base region surrounding the collector region; an emitter region above the intrinsic base region; and an extrinsic base region contacting the intrinsic base region.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Alexander M. Derrickson
Arkadiusz Malinowski
Jagar Singh
Judson R. Holt
Mankyu Yang
Date of Patent
October 31, 2023
Patent Application Number
17557176
Date Filed
December 21, 2021
Patent Citations
Patent Primary Examiner
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