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US Patent 11804545 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
August 25, 2021
Date of Patent
October 31, 2023
Patent Application Number
17411860
Patent Citations
‌
US Patent 8415250 Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
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US Patent 8487318 Semiconductor device and manufacturing method thereof
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US Patent 8623752 Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor device
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US Patent 8872263 Semiconductor device and method of manufacturing semiconductor device
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US Patent 10693001 Semiconductor device
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US Patent 7714352 Hetero junction semiconductor device
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US Patent 7824995 SiC semiconductor device and method for manufacturing the same
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US Patent 8035112 SIC power DMOSFET with self-aligned source contact
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US Patent 8044434 Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the same
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US Patent 7645658 Method of manufacturing silicon carbide semiconductor device
Patent Inventor Names
Ryota Nakamura
Yuki Nakano
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11804545
Patent Primary Examiner
‌
Fazli Erdem
CPC Code
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H01L 29/40
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H01L 21/046
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H01L 21/048
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H01L 21/485
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H01L 29/0696
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H01L 29/06
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H01L 29/1095
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H01L 29/10
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H01L 29/1608
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H01L 29/16
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